Nevşehir Hacı Bektaş Veli University Course Catalogue
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| Year/Semester of Study | 1 / Fall Semester | ||||
| Level of Course | 2nd Cycle Degree Programme | ||||
| Type of Course | Optional | ||||
| Department | PHYSICS (MASTER'S DEGREE) | ||||
| Pre-requisities and Co-requisites | None | ||||
| Mode of Delivery | Face to Face | ||||
| Teaching Period | 14 Weeks | ||||
| Name of Lecturer | SEZEN AKSÖZ (sezenaksoz@nevsehir.edu.tr) | ||||
| Name of Lecturer(s) | SEZEN AKSÖZ, | ||||
| Language of Instruction | Turkish | ||||
| Work Placement(s) | None | ||||
| Objectives of the Course | |||||
| Teaching Semiconductor materials in detailed information. | |||||
| Learning Outcomes | PO | MME | |
| The students who succeeded in this course: | |||
| LO-1 | To understand electrical characterization of semiconductors |
PO-1 Develop, enhance and deepen and obtain creative original definitions by combining current knowledge of the field and critical thinking and research based upon M. Sc. program skill and outcomes |
Examination Presentation Term Paper |
| LO-2 | To learn majority charge carrier properties methods of investigation. |
PO-3 Obtain new scientific knowledge and gain higher level of skills in field of search |
Examination Presentation Term Paper |
| LO-3 | To learn Galvonomanyetik effects |
PO-1 Develop, enhance and deepen and obtain creative original definitions by combining current knowledge of the field and critical thinking and research based upon M. Sc. program skill and outcomes |
Examination Presentation Term Paper |
| PO: Programme Outcomes MME:Method of measurement & Evaluation |
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| Course Contents | ||
| Introduction, Measurement of resistivity, Galvanomagnetic effects, Resistivity and Hall effect profiling of Non-uniform material, capacitance- voltage profiling, Interperation of capacitance-voltage profiles, Deep states in depletion regions, Deep level transient spectroscopy of majority carrier traps, Other techniques for study of majority carrier traps. | ||
| Weekly Course Content | ||
| Week | Subject | Learning Activities and Teaching Methods |
| 1 | Introduction, Semiconductor characterization | Explanation |
| 2 | Measurement of resistivity; Sampels with ohmic contac, The four point probe, | Explanation, Question-Answer |
| 3 | Contactless methods, Relationship between carrier density, mobility and resistivity | Explanation, Question-Answer |
| 4 | The Hall effect, The Hall scattering factor | Explanation, Question-Answer |
| 5 | Detailed analysis of temperature-dependent Hall data, Magnetoresistance | Explanation, Question-Answer |
| 6 | Resistivity and Hall effect profiling of Non-uniform material, Layer removal, Resistivity profiling with the Four point probe | Explanation, Question-Answer |
| 7 | Hall effect profiling | Explanation, Question-Answer |
| 8 | mid-term exam | |
| 9 | Magnetoresistance mobility profiling, Spreading resistance profiling | Explanation, Question-Answer |
| 10 | Capacitance-voltage profiling, Depletion capacitance, Profiling methods | Explanation, Question-Answer |
| 11 | Interperation of capacitance-voltage profiles | Explanation, Question-Answer |
| 12 | Relation between Hall effect and capacitance-voltage measurements | Explanation, Question-Answer |
| 13 | Deep states in depletion regions | Explanation, Question-Answer |
| 14 | Deep level transient spectroscopy of majority carrier traps | Explanation, Question-Answer |
| 15 | Other techniques for study of majority carrier traps. | Explanation, Question-Answer |
| 16 | final exam | |
| Recommend Course Book / Supplementary Book/Reading | ||
| 1 | E.H. Nicollian, J.R. Brews, MOS (Metal Oxide Semiconductors) Physics and Technology, John Wiley and Sons, London, 1982. | |
| 2 | S.M. Sze, Physics of Semiconductor Devices, vol. 2, John Wiley andSons, New York, 1981 | |
| 3 | The Electrical Characterization of semiconductors: Majority carriers and Electron States, P. Blood and J. W. Orton, London, 1992. | |
| Required Course instruments and materials | ||
| E.H. Nicollian, J.R. Brews, MOS (Metal Oxide Semiconductors) Physics and Technology, John Wiley and Sons, London, 1982. S.M. Sze, Physics of Semiconductor Devices, vol. 2, John Wiley andSons, New York, 1981 The Electrical Characterization of semiconductors: Majority carriers and Electron States, P. Blood and J. W. Orton, London, 1992. | ||
| Assessment Methods | |||
| Type of Assessment | Week | Hours | Weight(%) |
| mid-term exam | 8 | 2 | 40 |
| Other assessment methods | |||
| 1.Oral Examination | |||
| 2.Quiz | |||
| 3.Laboratory exam | |||
| 4.Presentation | |||
| 5.Report | |||
| 6.Workshop | |||
| 7.Performance Project | |||
| 8.Term Paper | |||
| 9.Project | |||
| final exam | 16 | 2 | 60 |
| Student Work Load | |||
| Type of Work | Weekly Hours | Number of Weeks | Work Load |
| Weekly Course Hours (Theoretical+Practice) | 3 | 14 | 42 |
| Outside Class | |||
| a) Reading | 1 | 14 | 14 |
| b) Search in internet/Library | 2 | 14 | 28 |
| c) Performance Project | 0 | ||
| d) Prepare a workshop/Presentation/Report | 2 | 14 | 28 |
| e) Term paper/Project | 2 | 14 | 28 |
| Oral Examination | 0 | ||
| Quiz | 0 | ||
| Laboratory exam | 0 | ||
| Own study for mid-term exam | 2 | 8 | 16 |
| mid-term exam | 2 | 1 | 2 |
| Own study for final exam | 2 | 14 | 28 |
| final exam | 2 | 1 | 2 |
| 0 | |||
| 0 | |||
| Total work load; | 188 | ||